Nanophotonic devices on thin buried oxide Silicon-On-Insulator substrates.

Improvement of a Nano-scale Silicon on Insulator Field Effect Transistor Performance using Electrode, Doping and Buried Oxide Engineering

In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...

Ultralow-power LSI Technology with Silicon on Thin Buried Oxide (SOTB) CMOSFET

A Study of ZnO Buffer Layer Effect on Physical Properties of ITO Thin Films Deposited on Different Substrates

The improvement of the physical properties of Indium Tin Oxide (ITO) layers is quite advantageous in photovoltaic applications. In this study the ITO film is deposited by RF sputtering onto p-type crystalline silicon (c-Si) with (100) orientation, multicrystalline silicon (mc-Si), and glass substrates coated with ZnO and annealed in vacuum furnace at 400°C. Electrical, optical, structural a...

Materials and Fabrication Processes for Transient and Bioresorbable HighPerformance Electronics

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Materials and fabrication procedures are described for bioresorbable transistors and simple integrated circuits, in which the key processing steps occur on silicon wafer substrates, in schemes compatible with methods used in conventional microelectronics. The approach relies on an unusual type of silicon on insulator wafer to yield devices that ...

Electrical properties of Al 2 O 3 films for TFEL - devices made with Sol - Gel technology

Thin films of Al2O3 have been deposited on ITO-coated glass substrates by a sol-gel dipcoat process. Aluminium isopropoxide (Al(OC3H7)3) was used as the Al source material. X-ray diffraction measurements show that these films are amorphous. Scanning electron microscopy and atomic force microscopy images of the films have revealed a relatively flat surface with no cracks. The dielectric properti...